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        當(dāng)前位置:首頁(yè) » 全站搜索 » 搜索:場(chǎng)效應(yīng)管主要參數(shù)
        [常見問(wèn)題解答]場(chǎng)效應(yīng)管主要參數(shù)及與其他管子的對(duì)比[ 2022-08-22 14:14 ]
        場(chǎng)效應(yīng)晶體管(Field Effect Transistor縮寫(FET))簡(jiǎn)稱場(chǎng)效應(yīng)管。主要有兩種類型:結(jié)型場(chǎng)效應(yīng)管(junction FET—JFET)和金屬-氧化物半導(dǎo)體場(chǎng)效應(yīng)管(metal-oxide semiconductor FET,簡(jiǎn)稱MOS-FET)。場(chǎng)效應(yīng)管由多數(shù)載流子參與導(dǎo)電,也稱為單極型晶體管。它屬于電壓控制型半導(dǎo)體器件。具有輸入電阻高、噪聲小、功耗低、動(dòng)態(tài)范圍大、易于集成、沒有二次擊穿現(xiàn)象、安全工作區(qū)域?qū)挼葍?yōu)點(diǎn),現(xiàn)已成為雙極型晶體管和功率晶體管的強(qiáng)大競(jìng)爭(zhēng)者。一、場(chǎng)效應(yīng)管的主要參數(shù)
        http://www.kannic.com/Article/cxygzycsjy_1.html3星
        [行業(yè)資訊]SPD02N50C3場(chǎng)效應(yīng)管參數(shù) (MOS管) SPD02N50C3規(guī)格書參數(shù)代換〔壹芯微〕[ 2021-12-21 13:39 ]
        SPD02N50C3場(chǎng)效應(yīng)管參數(shù) (MOS管) SPD02N50C3規(guī)格書參數(shù)代換〔壹芯微〕SPD02N50C3中文參數(shù),SPD02N50C3封裝引腳圖,SPD02N50C3數(shù)據(jù)手冊(cè),MOS管選型替代(生產(chǎn)廠家)SPD02N50C3場(chǎng)效應(yīng)管主要參數(shù)(最大額定值):漏源電壓(VDSS):560V柵源電壓(VGSS):±20V雪崩電流(IAR):1.8A漏極電流-連續(xù)(TJ=25°C)(ID):1.8A漏極電流-連續(xù)(TJ=100°C)(ID):1.1A漏極電流-脈沖(IDPlus):5.
        http://www.kannic.com/Article/spd02n50c3_1.html3星
        [行業(yè)資訊]SDU05N04場(chǎng)效應(yīng)管參數(shù) (MOS管) SDU05N04規(guī)格書參數(shù)代換〔壹芯微〕[ 2021-12-21 11:58 ]
        SDU05N04場(chǎng)效應(yīng)管參數(shù) (MOS管) SDU05N04規(guī)格書參數(shù)代換〔壹芯微〕SDU05N04中文參數(shù),SDU05N04封裝引腳圖,SDU05N04數(shù)據(jù)手冊(cè),MOS管選型替代(生產(chǎn)廠家)SDU05N04場(chǎng)效應(yīng)管主要參數(shù)(最大額定值):漏源電壓(VDSS):400V柵源電壓(VGSS):±30V漏極電流-連續(xù)(TJ=25°C)(ID):4A漏極電流-連續(xù)(TJ=70°C)(ID):3.3A漏極電流-脈沖(IDM):12A單脈沖雪崩能量(EAS):2.5mJ功耗(TC=25°
        http://www.kannic.com/Article/sdu05n04cx_1.html3星
        [行業(yè)資訊]FDD5N50場(chǎng)效應(yīng)管參數(shù) (MOS管) FDD5N50規(guī)格書參數(shù)代換〔壹芯微〕[ 2021-12-21 11:17 ]
        FDD5N50場(chǎng)效應(yīng)管參數(shù) (MOS管) FDD5N50規(guī)格書參數(shù)代換〔壹芯微〕FDD5N50中文參數(shù),FDD5N50封裝引腳圖,FDD5N50數(shù)據(jù)手冊(cè),MOS管選型替代(生產(chǎn)廠家)FDD5N50場(chǎng)效應(yīng)管主要參數(shù)(最大額定值):漏源電壓(VDSS):500V柵源電壓(VGSS):±30V雪崩電流(IAR):4A漏極電流-連續(xù)(TJ=25°C)(ID):4A漏極電流-連續(xù)(TJ=100°C)(ID):2.4A漏極電流-脈沖(IDM):16A單脈沖雪崩能量(EAS):256mJ重復(fù)雪崩能量
        http://www.kannic.com/Article/fdd5n50cxy_1.html3星
        [行業(yè)資訊]NDD05N50ZT4G場(chǎng)效應(yīng)管參數(shù),NDD05N50ZT4G規(guī)格書下載,中文資料[ 2021-12-01 16:09 ]
        NDD05N50ZT4G場(chǎng)效應(yīng)管參數(shù),NDD05N50ZT4G規(guī)格書下載,中文資料壹芯微®NDD05N50ZT4G替代國(guó)際知名品牌對(duì)應(yīng)型號(hào),MOS(場(chǎng)效應(yīng)管)NDD05N50ZT4G詳細(xì)參數(shù),封裝引腳圖,規(guī)格書(數(shù)據(jù)手冊(cè))(圖:NDD05N50ZT4G場(chǎng)效應(yīng)管封裝TO-252引腳圖)NDD05N50ZT4G場(chǎng)效應(yīng)管主要參數(shù)參數(shù)符號(hào)值單位漏極-源極電壓VDSS500V柵極-源極電壓VGSS±30V雪崩電流IAR-A柵極-源極電壓(TJ=25°C)ID4.7A柵極-源極電壓(TJ=100&
        http://www.kannic.com/Article/ndd05n50zt_1.html3星
        [行業(yè)資訊]AP05N50EH場(chǎng)效應(yīng)管參數(shù)資料,AP05N50EH-HF規(guī)格書下載,MOS管廠家直銷[ 2021-12-01 14:43 ]
        AP05N50EH場(chǎng)效應(yīng)管參數(shù)資料,AP05N50EH-HF規(guī)格書下載,MOS管廠家直銷壹芯微®AP05N50EH替代國(guó)際知名品牌對(duì)應(yīng)型號(hào),MOS(場(chǎng)效應(yīng)管)AP05N50EH詳細(xì)參數(shù),封裝引腳圖,規(guī)格書(數(shù)據(jù)手冊(cè))(圖:AP05N50EH場(chǎng)效應(yīng)管封裝TO-252引腳圖)AP05N50EH場(chǎng)效應(yīng)管主要參數(shù)參數(shù)符號(hào)值單位漏極-源極電壓VDSS500V柵極-源極電壓VGSS±30V雪崩電流IAR5A柵極-源極電壓(TJ=25°C)ID5A柵極-源極電壓(TJ=100°C)ID-A脈
        http://www.kannic.com/Article/ap05n50ehc_1.html3星
        [行業(yè)資訊]AP05N50H場(chǎng)效應(yīng)管參數(shù) MOS管 AP05N50H參數(shù)規(guī)格書下載[ 2021-12-01 14:35 ]
        AP05N50H場(chǎng)效應(yīng)管參數(shù) MOS管 AP05N50H-HF參數(shù)規(guī)格書下載AP05N50H參數(shù)及代換,AP05N50H封裝引腳圖,AP05N50H規(guī)格書(數(shù)據(jù)手冊(cè))(圖(如上):AP05N50H,MOS場(chǎng)效應(yīng)管,TO-252封裝引腳圖)壹芯微供應(yīng)AP05N50H系列場(chǎng)效應(yīng)管,可替代昂貴的國(guó)外知名品牌對(duì)應(yīng)型號(hào)。AP05N50H場(chǎng)效應(yīng)管主要參數(shù)如下:參數(shù)符號(hào)值單位漏極-源極電壓VDSS500V柵極-源極電壓VGSS±20V雪崩電流IAR3A柵極-源極電壓(TJ=25°C)ID5.0A柵極-源極電
        http://www.kannic.com/Article/ap05n50hcx_1.html3星
        [行業(yè)資訊]IRFR430A場(chǎng)效應(yīng)管參數(shù),IRFR430A規(guī)格書下載,中文資料[ 2021-11-30 11:41 ]
        IRFR430A場(chǎng)效應(yīng)管參數(shù),IRFR430A規(guī)格書下載,中文資料IRFR430A參數(shù)及代換,IRFR430A封裝引腳圖,IRFR430A規(guī)格書(數(shù)據(jù)手冊(cè))(圖(如上):IRFR430A,MOS場(chǎng)效應(yīng)管,TO-252封裝引腳圖)壹芯微供應(yīng)IRFR430A系列場(chǎng)效應(yīng)管,可替代昂貴的國(guó)外知名品牌對(duì)應(yīng)型號(hào)。IRFR430A場(chǎng)效應(yīng)管主要參數(shù)如下:參數(shù)符號(hào)值單位漏極-源極電壓VDSS500V柵極-源極電壓VGSS±30V雪崩電流IAR5.0A柵極-源極電壓(TJ=25°C)ID5.0A柵極-源極電壓(T
        http://www.kannic.com/Article/irfr430acx_1.html3星
        [行業(yè)資訊]FDD5N50NZF場(chǎng)效應(yīng)管參數(shù)_規(guī)格書下載(替代國(guó)外品牌型號(hào))MOS管生產(chǎn)廠家[ 2021-11-30 10:56 ]
        FDD5N50NZF場(chǎng)效應(yīng)管參數(shù)_規(guī)格書下載(替代國(guó)外品牌型號(hào))MOS管生產(chǎn)廠家FDD5N50NZF參數(shù)及代換,FDD5N50NZF封裝引腳圖,FDD5N50NZF規(guī)格書(數(shù)據(jù)手冊(cè))(圖(如上):FDD5N50NZF,MOS場(chǎng)效應(yīng)管,TO-252封裝引腳圖)壹芯微供應(yīng)FDD5N50NZF系列場(chǎng)效應(yīng)管,可替代昂貴的國(guó)外知名品牌對(duì)應(yīng)型號(hào)。FDD5N50NZF場(chǎng)效應(yīng)管主要參數(shù)如下:參數(shù)符號(hào)值單位漏極-源極電壓VDSS500V柵極-源極電壓VGSS±25V雪崩電流IAR3.3A柵極-源極電壓(TJ=25&de
        http://www.kannic.com/Article/fdd5n50nzf_1.html3星
        [行業(yè)資訊]FIR2N60ALG場(chǎng)效應(yīng)管參數(shù) MOS管 FIR2N60ALG參數(shù)規(guī)格書下載[ 2021-11-30 10:19 ]
        FIR2N60ALG場(chǎng)效應(yīng)管參數(shù) MOS管 FIR2N60ALG參數(shù)規(guī)格書下載FIR2N60ALG參數(shù)及代換,FIR2N60ALG封裝引腳圖,FIR2N60ALG規(guī)格書(數(shù)據(jù)手冊(cè))(圖(如上):FIR2N60ALG,MOS場(chǎng)效應(yīng)管,TO-252封裝引腳圖)壹芯微供應(yīng)FIR2N60ALG系列場(chǎng)效應(yīng)管,可替代昂貴的國(guó)外知名品牌對(duì)應(yīng)型號(hào)。FIR2N60ALG場(chǎng)效應(yīng)管主要參數(shù)如下:參數(shù)符號(hào)值單位漏極-源極電壓VDSS600V柵極-源極電壓VGSS±30V雪崩電流IAR2A柵極-源極電壓(TJ=25°C
        http://www.kannic.com/Article/fir2n60alg_1.html3星
        [行業(yè)資訊]SPD02N60S5場(chǎng)效應(yīng)管參數(shù),JCS2N60規(guī)格書下載,中文資料[ 2021-11-29 14:59 ]
        SPD02N60S5場(chǎng)效應(yīng)管參數(shù),JCS2N60規(guī)格書下載,中文資料SPD02N60S5參數(shù)及代換,SPD02N60S5封裝引腳圖,SPD02N60S5規(guī)格書(數(shù)據(jù)手冊(cè))(圖:SPD02N60S5 MOS場(chǎng)效應(yīng)管 TO-252封裝引腳圖)壹芯微供應(yīng)SPD02N60S5系列場(chǎng)效應(yīng)管,可替代昂貴的國(guó)外知名品牌對(duì)應(yīng)型號(hào)。SPD02N60S5場(chǎng)效應(yīng)管主要參數(shù)如下:參數(shù)符號(hào)值單位漏極-源極電壓VDSS600V柵極-源極電壓VGSS±20V雪崩電流IAR1.8A柵極-源極電壓ID1.8A漏極電流-脈沖ID pul
        http://www.kannic.com/Article/spd02n60s5_1.html3星
        [行業(yè)資訊]P0460AD場(chǎng)效應(yīng)管參數(shù)_規(guī)格書下載(替代國(guó)外品牌型號(hào))MOS管生產(chǎn)廠家[ 2021-11-29 14:45 ]
        P0460AD場(chǎng)效應(yīng)管參數(shù)_規(guī)格書下載(替代國(guó)外品牌型號(hào))MOS管生產(chǎn)廠家P0460AD參數(shù)及代換,P0460AD封裝引腳圖,P0460AD規(guī)格書(數(shù)據(jù)手冊(cè))(圖:P0460AD MOS場(chǎng)效應(yīng)管 TO-252封裝引腳圖)壹芯微供應(yīng)P0460AD系列場(chǎng)效應(yīng)管,可替代昂貴的國(guó)外知名品牌對(duì)應(yīng)型號(hào)。P0460AD場(chǎng)效應(yīng)管主要參數(shù)如下:參數(shù)符號(hào)值單位漏極-源極電壓VDSS600V柵極-源極電壓VGSS±30V雪崩電流IAS3A柵極-源極電壓ID4A漏極電流-脈沖IDM20A單脈沖雪崩能量EAS45mJ重復(fù)雪崩能
        http://www.kannic.com/Article/p0460adcxy_1.html3星
        [行業(yè)資訊]TK4P60DB場(chǎng)效應(yīng)管參數(shù) MOS管 TK4P60DB參數(shù)規(guī)格書下載[ 2021-11-29 14:21 ]
        TK4P60DB場(chǎng)效應(yīng)管參數(shù) MOS管 TK4P60DB參數(shù)規(guī)格書下載TK4P60DB場(chǎng)效應(yīng)管參數(shù)代換,TK4P60DB封裝引腳圖,TK4P60DB規(guī)格書(數(shù)據(jù)手冊(cè))(圖:TK4P60DB場(chǎng)效應(yīng)管 TO-252封裝引腳圖)壹芯微供應(yīng)TK4P60DB系列場(chǎng)效應(yīng)管,可替代昂貴的國(guó)外知名品牌對(duì)應(yīng)型號(hào)。TK4P60DB場(chǎng)效應(yīng)管主要參數(shù)如下:參數(shù)符號(hào)值單位漏極-源極電壓VDSS650V柵極-源極電壓VGSS±30V單脈沖雪崩電流IAR3.7A柵極-源極電壓ID3.7A漏極電流-脈沖IDM-A單脈沖雪崩能量EAS
        http://www.kannic.com/Article/tk4p60dbcx_1.html3星
        [行業(yè)資訊]IPD60R2K0C6場(chǎng)效應(yīng)管參數(shù) 代換 規(guī)格書資料下載 - MOS管廠家 - 壹芯微[ 2021-11-27 16:25 ]
        IPD60R2K0C6場(chǎng)效應(yīng)管參數(shù) 代換 規(guī)格書資料下載 - MOS管廠家 - 壹芯微IPD60R2K0C6場(chǎng)效應(yīng)管參數(shù)代換,IPD60R2K0C6封裝引腳圖,IPD60R2K0C6規(guī)格書(數(shù)據(jù)手冊(cè))(圖:IPD60R2K0C6場(chǎng)效應(yīng)管 TO-252封裝引腳圖)壹芯微供應(yīng)IPD60R2K0C6系列場(chǎng)效應(yīng)管,可替代昂貴的國(guó)外知名品牌對(duì)應(yīng)型號(hào)。IPD60R2K0C6場(chǎng)效應(yīng)管主要參數(shù)如下:參數(shù)符號(hào)值單位漏極-源極電壓VDSS650V柵極-源極電壓VGSS±320V單脈沖雪崩電流IAR0.4A柵極-源極電壓I
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